| PART |
Description |
Maker |
| IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80 |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS[IXYS Corporation]
|
| IXFR44N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs ISOPLUS247
|
IXYS[IXYS Corporation]
|
| IXFT10N100Q |
HiPerFETTM Power MOSFETs Q Class
|
IXYS Corporation
|
| IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
|
http://
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET?/a> Power MOSFETs Q-Class
HiPerFET⑩ Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| IXFE55N50 IXFE50N50 |
HiPerFETTM Power MOSFET
|
IXYS Corporation
|
| IXFE50N50 |
(IXFE50N50 / IXFE55N50) HiPerFETTM Power MOSFET
|
IXYS Corporation
|
| IXFR180N085 |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET-TM Power MOSFETs ISOPLUS247-TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| CLA-EP10 |
CLA-EP10
|
Ferroxcube International Holding B.V.
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFH80N10Q IXFT80N10Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(??ぇ婕???荤┛?靛?00V,瀵奸??甸?5m惟??娌??澧?己??iPerFET???MOSFET)
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs Q-Class
|
IXYS Corporation
|
